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| SLOTTED PHOTOINTERRUPTER Description The MIT-5A11B consists of a Gallium Arsenide infrared emitting diode and a NPN silicon phototransistor built in a black plastic housing. It is a trasmissive subminiature photointerrupter. MIT-5A11B Package Dimensions Unit: mm ( inches ) Features Non -contact switching For- direct pc board Dual - in - line socket mounting Fast switching speed Choice of mounting configuration. NOTE 1. Tolerance is 0.25 mm (.006") unless otherwise noted. Absolute Maximum Ratings @TA =25oC Parameter Continuous Forward Current INPUT Reverse Voltage Power Dissipation Collector-emitter breakdown voltage OUTPUT Emitter-Collector breakdown voltage Collector power dissipation Total power dissipation Operating Temperature Range Storage Temperature Range Symbol IF VR Pad V(BR)CEO V(BR)ECO PC PTOT Topr Tstg Maximum Rating 50 5 75 30 5 75 100 -25 C to + 85 C o o -40 C to + 100 C o o Unit mA V mW V V mW mW Unity Opto Technology Co., Ltd. 07/26/2004 MIT-5A11B Optical-Electrical Characteristics @TA =25oC Parameter Input Output Forward Voltage Reverse Current Collector Dark Current Collector Emitter Saturation Voltage Collector Current Transfer Cha- Response Time (RISE) racteristics 60 50 40 30 20 10 0 -25 0 25 50 75 100 symbol Min. Typ. Max. Unit. VF IR Iceo VCE(SAT) Ic (on) tr tf 1 1.2 20 20 120 100 80 60 40 20 0 -25 0 25 PTOT PD , PC Test Conditions IF =20mA 1.4 10 100 0.4 10 100 100 V A VR =5V nA Vce =10V V Ic=0.1mA,Ee=0.1mW/cm 2 mA IF =20mA, Vce =5V S Ic=100A, Vce =5V S RL =1k, d =1mm Response Time (FALL) Typical Optical-Electrical Characteristic Curves Forward Current IF (mA) Power Dissipation (mW) Ambient Temperature TA Fig.1 forward Current VS. Ambient Temperature Ambient Temperature TA ( oC ) Fig.2 Power Dissipation vs Ambient Temperature Vce=2V Ta=25oC 50 75 100 Collector Current Ic (mA) Forward Current IF (mA) 100 80 60 40 20 0 0.8 1.2 1.6 2.0 2.4 2.8 2.8 2.4 2.0 1.6 1.2 0.8 0.4 0.0 0 5 10 15 20 25 30 Collector Current Ic (A) 2.8 2.4 2.0 1.6 1.2 0.8 0.4 0.0 0 Relative Collector Current (%) Forward Voltage VF (V) Fig.3 Forward Current VS Forward Voltage Ta=25oC 20mA IF=15mA 10mA 4mA Forward Current IF (mA) Fig.4 Collector Current vs Forward Current 120 100 80 60 40 20 0 -25 0 25 50 75 100 2 4 6 8 10 12 Collector-Emitter Voltage Vce (V) Fig.5 Collector Current vs. Vce Ambient Temperature TA ( C) Fig.6 Relative Collector Current VS. TA o Unity Opto Technology Co., Ltd. 07/26/2004 MIT-5A11B Typical Optical-Electrical Characteristic Curves Collector Dark Current ICEO 10-6 10 -7 Response Time (s) VCE=20V 1000 100 10 1 V CE =2V I C =100mA Ta=25 C o 10-8 10-9 10-10 0 Ambient Temperature TA ( oC ) Fig.7 Collector Dark Current vs. Ambient Temperature 25 50 75 100 0.1 0.01 Load Resistance Rt (K) Fig.8 Response Time vs. Load Resistance 0.1 1 10 100 Relative Sensitivity (%) 100 80 60 40 20 0 700 Ta=25oC Response Time Measurement Circuit Input Output tr Input 90 % 10 % t t tf VCC 800 900 1000 1100 1200 Output RL Wavelength (nm) Fig.9 Spectral Sensitivity (Detecting side) Sensing Position Characteristics (Typical) X Y I F =20mA V CE =5V Ta=25 o C I F =20mA V CE =5V Ta=25 o C Relative light current IL (%) 100 50 (Center of optical axis) X Y 0 0 -2 -1 0 +1 +2 (mm) -2 -1 0 +1 +2 (mm) 0 + + Distance d (mm) Unity Opto Technology Co., Ltd. 07/26/2004 |
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